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| 7MBR50SD120 PIM/Built-in converter with thyristor and brake (S series) 1200V / 50A / PIM Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit IGBT Modules Applications * Inverter for Motor Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Inverter Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Condition Continuous 1ms Collector current Tc=25C Tc=80C Tc=25C Tc=80C Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake 1 device Continuous 1ms 1 device Tc=25C Tc=80C Tc=25C Tc=80C PC VRRM VDRM VRRM IT(AV) ITSM Tjw VRRM IO IFSM I2t Junction temperature (except Thyristor) Tj Storage temperature Tstg Isolation between terminal and copper base *2 Viso voltage between thermistor and others *3 Mounting screw torque Thyristor Converter 50Hz/60Hz sine wave Tj=125C, 10ms half sine wave 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave AC : 1 minute Rating 1200 20 75 50 150 100 50 360 1200 20 35 25 70 50 180 1200 1600 1600 50 530 125 1600 50 520 1352 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 Unit V V A A A W V V A A W V V V A A C V A A A 2s C C V V N*m *1 Recommendable value : 1.3 to 1.7 N*m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base. IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter 7MBR50SD120 Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM IDM IRRM IGT VGT VTM VFM IRRM R B Condition VCE=1200V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=50mA VGE=15V, Ic=50A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=600V IC=50A VGE=15V RG=24 IF=50A chip terminal IF=50A VCES=1200V, VGE=0V VCE=0V, VGE=20V IC=25A, VGE=15V chip terminal VCC=600V IC=25A VGE=15V RG=51 VR=1200V VDM=1600V VRM=1600V VD=6V, IT=1A VD=6V, IT=1A ITM=50A chip terminal IF=50A chip terminal VR=1600V T=25C T=100C T=25/50C Min. Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Characteristics Typ. Max. 250 200 5.5 7.2 8.5 2.1 2.3 2.7 6000 0.35 0.25 0.45 0.08 2.3 2.5 1.2 0.6 1.0 0.3 3.3 350 250 200 2.7 1.2 0.6 1.0 0.3 250 1.0 1.0 100 2.5 1.15 Unit A nA V V pF s V ns A nA V s Brake Turn-on time Turn-off time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage Forward on voltage 2.1 2.25 0.35 0.25 0.45 0.08 Thyristor Converter 1.0 1.1 1.1 1.2 5000 495 3375 A mA mA mA V V V Reverse current Resistance B value 1.5 250 520 3450 A K Thyristor 465 3305 Thermal resistance Characteristics Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound Characteristics Typ. Max. 0.35 0.75 0.69 0.56 0.50 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 120 120 7MBR50SD120 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) VGE= 20V 15V 12V 100 100 VGE= 20V 15V 12V Collector current : Ic [ A ] 80 Collector current : Ic [ A ] 80 10V 60 60 10V 40 40 20 20 8V 8V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 120 10 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) Tj= 25C 100 Tj= 125C 80 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 60 4 Ic= 100A 2 Ic= 50A Ic= 25A 40 20 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 20000 1000 [ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=50A, Tj= 25C 25 10000 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 Cies 600 15 1000 400 10 Coes Cres 200 5 100 0 5 10 15 20 25 30 35 0 0 100 200 300 400 0 500 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] IGBT Module 7MBR50SD120 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg= 24, Tj= 25C 1000 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg= 24, Tj= 125C toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton ton tr tr tf 100 100 tf 50 0 20 40 60 80 50 0 20 40 60 80 Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=50A, VGE=15V, Tj= 25C 5000 14 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=24 tr Switching loss : Eon, Eoff, Err [ mJ/pulse ] ton toff 12 Eon(125C) Switching time : ton, tr, toff, tf [ nsec ] 10 1000 8 Eon(25C) 500 6 Eoff(125C) 4 Eoff(25C) Err(125C) 100 tf 2 Err(25C) 50 10 50 100 500 0 0 20 40 60 80 100 Gate resistance : Rg [ ] Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=50A, VGE=15V, Tj= 125C 40 600 [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=24, Tj<=125C Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 30 500 Collector current : Ic [ A ] 400 20 300 SCSOA (non-repetitive pulse) 200 10 Eoff 100 RBSOA (Repetitive pulse) 0 10 50 100 Err 500 0 0 200 400 600 800 1000 1200 1400 Gate resistance : Rg [ ] Collector - Emitter voltage : VCE [ V ] IGBT Module 7MBR50SD120 [ Inverter ] Forward current vs. Forward on voltage (typ.) 120 300 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=24 Tj=125C 100 Tj=25C trr(125C) Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 80 100 trr(25C) 60 40 Irr(125C) Irr(25C) 20 0 0 1 2 3 4 10 0 20 40 60 80 Forward on voltage : VF [ V ] Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 120 200 [ Thyristor ] On-state current vs. On-state voltage (typ.) 100 Tj= 25C Tj= 125C 100 Tjw= 125C Tjw= 25C 80 60 Instantaneous on-state current [ A ] 0.4 0.8 1.2 1.6 2.0 Forward current : IF [ A ] 40 10 20 0 0.0 2 0.0 0.4 0.8 1.2 1.6 2.0 Forward on voltage : VFM [ V ] Instantaneous on-state voltage [ V ] Transient thermal resistance 5 200 100 [ Thermistor ] Temperature characteristic (typ.) Thermal resistanse : Rth(j-c) [ C/W ] 1 Resistance : R [ k ] 1 FWD[Inverter] IGBT[Brake] Thyristor Conv. Diode IGBT[Inverter] 10 0.1 1 0.01 0.001 0.01 0.1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse width : Pw [ sec ] Temperature [ C ] IGBT Module 7MBR50SD120 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 60 60 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) VGE= 20V 15V 12V 50 50 VGE= 20V 15V 12V Collector current : Ic [ A ] 40 Collector current : Ic [ A ] 40 10V 30 30 10V 20 20 10 10 8V 8V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 60 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) Tj= 25C 50 Tj= 125C 40 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 30 4 Ic= 50A 2 Ic= 25A Ic= 12.5A 20 10 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 10000 1000 [ Brake ] Dynamic Gate charge (typ.) Vcc=600V, Ic=25A, Tj= 25C 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 Cies 600 15 1000 400 10 200 5 Coes Cres 100 0 5 10 15 20 25 30 35 0 0 50 100 150 200 0 250 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] IGBT Module Outline Drawings, mm 7MBR50SD120 Marking : White Marking : White Equivalent Circuit Schematic [ Converter ] 21 (P) [ Thyristor ] 26 [ Brake ] 22(P1) [ Inverter ] [ Thermistor ] 8 25 20 (Gu) 18 (Gv ) 16 (Gw) 9 1(R) 2(S) 3(T) 19(Eu) 7(B) 17(Ev ) 4(U) 15(Ew) 5(V) 6(W) 14(Gb) 23(N) 24(N1) 13(Gx) 12(Gy ) 11(Gz) 10(En) |
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